Metallic oxygen barrier diffusion applied to high-kappa deposition

abstract

A thin metallic interlayer was deposited on Si and Si/SiO(2) substrate prior to the sputtering of HfO(2) films. The metallic interlayer, in fact, acts as an oxygen barrier during the HfO(2) deposition, preventing the formation of a low-kappa layer at the high-kappa/Si interface. After annealing, the metal diffuses in the HfO(2) film. When the thickness of the metallic interlayer is properly adjusted, with respect to the thickness of the HfO(2) film, the interfacial layer at HfO(2)/Si interface can almost be suppressed, thus improving the electrical properties of the gate stack. c 2011 American Vacuum Society. [DOI: 10.1116/1.3534019]

keywords

GATE DIELECTRICS; SILICON; OXIDES; INTERFACE; HFO2; FILM; SI

subject category

Engineering; Science & Technology - Other Topics; Physics

authors

Rauwei, E; Rauwel, P; Ducroquet, F; Matko, I; Lourenco, AC

our authors

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