resumo
Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound - morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O-3 (PZT) - are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 degrees C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 mu C cm(-2) is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of similar to 90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.
palavras-chave
SOL-GEL METHOD; FIELD-EFFECT TRANSISTORS; PBTIO3 THIN-FILMS; FERROELECTRIC OXIDES; FLEXIBLE ELECTRONICS; EXCIMER-LASER; CRYSTALLIZATION; PRECURSORS; TECHNOLOGY; DEPOSITION
categoria
Science & Technology - Other Topics
autores
Bretos, I; Jimenez, R; Tomczyk, M; Rodriguez-Castellon, E; Vilarinho, PM; Calzada, ML
nossos autores
Monika Malgorzata Tomczyk
Estudante de doutoramento
Paula Maria Lousada Silveirinha Vilarinho
Vice-Diretoragradecimentos
This work was financed by Spanish Projects MAT2013-40489-P (MINECO) and PIE-201460E094 (CSIC), and Portuguese Project Accoes Integradas Luso-Espanholas 2012, ref.a: E-98/12. The COST Action IC1208 also contributed to this study. Funding support from Fundacao para a Ciencia e a Tecnologia (FCT), Fundo Europeu de Desenvolvimento Regional Portugal (FEDER), QREN-COMPETE Portugal, and the Portuguese Associate Laboratory CICECO (PEst-C/CTM/LA0011/2013) is acknowledged. Monika Tomczyk acknowledges FCT for financial support (SFRH/BD/80123/2011). The authors thank Mr. Pedro Gutierrez-Gonzalez (Universidad Autonoma de Madrid, Spain) for assistance with sample preparation.