resumo
Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic- like functional properties; in short, the electronic response must depend on the voltage history, thus enabling learning algorithms. Here we demonstrate volatile ferroelectric switching of Sn2P2S6 at room temperature and see that initial polarization orientation strongly determines the properties of polarization switching. In particular, polarization switching hysteresis is strongly imprinted by the original polarization state, shifting the regions of non-linearity toward zero-bias. As a corollary, polarization switching also enables effective capacitive switching, approaching the sought-after regime of memcapacitance. Landau-Ginzburg-Devonshire simulations demonstrate that one mechanism by which polarization can control the shape of the hysteresis loop is the existence of charged domain walls (DWs) decorating the periphery of the repolarization nucleus. These walls oppose the growth of the switched domain and favor back-switching, thus creating a scenario of controlled volatile ferroelectric switching. Although the measurements were carried out with single crystals, prospectively volatile polarization switching can be tuned by tailoring sample thickness, DW mobility and electric fields, paving way to non-linear dielectric properties for smart electronic circuits.
palavras-chave
PHASE-TRANSITION
categoria
Engineering; Physics
autores
Neumayer, SM; Ievlev, A; Tselev, A; Basun, SA; Conner, BS; Susner, MA; Maksymovych, P
nossos autores
Alexander Tselev
Investigador PrincipalProjectos
Collaboratory for Emerging Technologies, CoLab (EMERGING TECHNOLOGIES)
agradecimentos
The experiments and simulations were supported by the Center for Nanophase Material Sciences, which is a U.S. DOE Office of Science User Facility. Analysis and manuscript writing were supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. We also acknowledge support through the United States Air Force Office of Scientific Research (AFOSR) LRIR 18RQCOR100 as well as funding by AOARD-MOST Grant Number F4GGA21207H002. In addition, we acknowledge funding from the National Academies of Science and Engineering through the National Research Council Senior Fellowship award. AT acknowledges individual support by the 2021.03599.CEECIND through national funds provided by FCT - Fundacao para a Ciencia e a Tecnologia (Portugal) as well as support of the project CICECO-Aveiro Institute of Materials, UIDB/50011/2020 & amp; UIDP/50011/2020, financed by national funds through the FCT/MEC and when appropriate co-financed by FEDER under the PT2020 Partnership Agreement.