Effect of seed layer thickness on texture and electrical properties of sol-gel derived (Ba0.8Sr0.2) TiO3 thin films


The perovskite phase nucleation and growth of Ba0.8Sr0.2TiO3 [BST(80/20)] films was restricted to the bottom interface by the use of a Ba0.8Sr0.2TiO3 [BST(80/20)] sol-gel seed layer of optimized thickness. As a result (h00) preferred orientation, BST thin films on Pt/Ti/SiO2/Si with enhanced electric properties were prepared by sol-gel at considerably low temperatures (700 degrees C). The effect of sol-gel seed layers and their thickness on the structure/ microstructure and electric properties of BST sol-gel derived films was evaluated in this study. 400-nm-thick BST films with a 30-nm-thick seed layer showed a maximized (h00) preferred orientation growth with a grain size of 120 nm. The dielectric constant varied from 300 to 830 at 1 kHz and from 230 to 580 at 1 MHz for films without a seed layer and with a 30-nm-thick seed layer, respectively. In addition the tunability of the dielectric constant was improved to similar to 37% at 150 kV/cm, compared with that without seed layer. The remanant polarization and leakage current of BST films with an optimal seed layer were 1.6 mu C/cm(2) with a coercive field of 30 kV/cm and 8.0 x 10(-7) A/cm(2) up to an applied electric field of 167.5 kV/cm, respectively. The electrical performance of these BST films is discussed in relation to the effect of the seed layer thickness on the texture and microstructure of the films.




Chemistry; Materials Science


Fu, Z; Wu, AY; Vilarinho, PM

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