Non-aqueous sol-gel routes applied to atomic layer deposition of oxides
authors Clavel, G; Rauwel, E; Willinger, MG; Pinna, N
nationality International
journal JOURNAL OF MATERIALS CHEMISTRY
keywords DEPENDENT ESTER ELIMINATION; CHEMICAL-VAPOR-DEPOSITION; N-BUTYL ORTHOSILICATE; TETRA-TERT-BUTOXIDE; MIXED-METAL OXIDES; THIN-FILMS; SILICATE FILMS; TITANIUM ISOPROPOXIDE; FORMATION MECHANISMS; ALKOXIDE PRECURSORS
abstract Atomic layer deposition (ALD) is an elegant technique used for the deposition of highly conformal thin films. In ALD, the growth of the film is based on self-limited surface reactions. This enables not only control of the film thickness on the atomic scale, but also offers interesting possibilities to study the mechanisms of the film growth. This Feature Article discusses recent developments and advances in metal oxide thin film deposition based on non-aqueous sol-gel routes applied to ALD. The advantages and drawbacks are compared with respect to water-assisted depositions making use of traditional sol-gel chemistry. In order to better understand the mechanisms involved in film formation, different chemical approaches for metal oxide formation in solution and for thin film growth by ALD will be compared and discussed. Issues that have to be accomplished in order to achieve better control and understanding of thin film formation will also be discussed. In addition, it will be outlined how the use of in situ analytical techniques can provide a more detailed insight into the mechanisms involved in the different growth steps and more generally, on the formation of oxides.
publisher ROYAL SOC CHEMISTRY
issn 0959-9428
year published 2009
volume 19
issue 4
beginning page 454
ending page 462
digital object identifier (doi) 10.1039/b806215c
web of science category Chemistry, Physical; Materials Science, Multidisciplinary
subject category Chemistry; Materials Science
unique article identifier WOS:000262440400002

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