Dielectric response of polycrystalline Sr1-1.5xBixTiO3 thin films under direct current bias
authors Okhay, O; Wu, AY; Vilarinho, PM; Tkach, A
nationality International
author keywords bismuth compounds; dielectric polarisation; dielectric thin films; electric field effects; permittivity; sol-gel processing; strontium compounds
keywords RELAXOR; SRTIO3
abstract The effect of dc electric field E-dc on the dielectric behavior of sol-gel derived Sr1-1.5xBixTiO3 films on Si/SiO2/TiO2/Pt substrates is systematically studied between 10 and 300 K. The rounded peak in the temperature dependence of the dielectric constant epsilon(')(T) of all Sr1-1.5xBixTiO3 films is strongly suppressed under dc bias. The observed dielectric behavior is attributed to the formation of polar dipoles by the introduction of Bi into Sr site. A high tunability (similar to 40%) and communication quality factor (similar to 10 000) under 100 kV/cm make moderately Bi-doped SrTiO3 films a promising material for tunable devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3463472]
issn 0003-6951
year published 2010
volume 97
issue 6
digital object identifier (doi) 10.1063/1.3463472
web of science category Physics, Applied
subject category Physics
unique article identifier WOS:000280940900064
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