Dielectric response of polycrystalline Sr1-1.5xBixTiO3 thin films under direct current bias


The effect of dc electric field E-dc on the dielectric behavior of sol-gel derived Sr1-1.5xBixTiO3 films on Si/SiO2/TiO2/Pt substrates is systematically studied between 10 and 300 K. The rounded peak in the temperature dependence of the dielectric constant epsilon(')(T) of all Sr1-1.5xBixTiO3 films is strongly suppressed under dc bias. The observed dielectric behavior is attributed to the formation of polar dipoles by the introduction of Bi into Sr site. A high tunability (similar to 40%) and communication quality factor (similar to 10 000) under 100 kV/cm make moderately Bi-doped SrTiO3 films a promising material for tunable devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3463472]



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Okhay, O; Wu, AY; Vilarinho, PM; Tkach, A

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The authors acknowledge the financial support from FEDER, FCT and CICECO. O. Okhay is thankful to FCT for financial support within the scholarship SFRH/BD/19861/2004.

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