abstract
The effect of nonstoichiometry (Sr/Ti ratio from 0.995 to 1.02) on the bulk and grain boundary contributions to the electrical response of strontium titanate (STO) ceramics is investigated. Nonstoichiometric STO exhibits lower electrical resistivity than its stoichiometric counterpart. This decrease is systematic for both Ti- and Sr-excess and with a greater effect on the grain boundary resistivity compared to bulk. Moreover, systematic variations with the degree of nonstoichiometry are observed for bulk and grain boundary conductivity, activation energy, and capacitance. These changes are correlated with a high concentration of point defects and induced by the nonstoichiometry, increasing the charge carrier concentration. As a result, nonstoichiometry can be used to tailor the microstructure and properties of strontium titanate, particularly grain boundary properties.
keywords
BOUNDARY DEFECT CHEMISTRY; ACCEPTOR-DOPED TITANATES; ABNORMAL GRAIN-GROWTH; IMPEDANCE SPECTROSCOPY; DIELECTRIC RESPONSE; SRTIO3; LAYER; SR0.97TI1-XFEXO3-DELTA; CONDUCTIVITY
subject category
Chemistry; Science & Technology - Other Topics; Materials Science
authors
Amaral, L; Tkach, A; Vilarinho, PM; Senos, AMR
our authors
acknowledgements
This work was developed within the scope of the project CICECO-Aveiro Institute of Materials, POCI-01-0145-FEDER-007679 (FCT ref. UID/CTM/50011/2013), financed by national funds through the FCT/MEC and when appropriate co-financed by FEDER under the PT2020 Partnership Agreement. The authors acknowledge as well the financial support from the Foundation for Luso American Development (FLAD), Portugal. FCT is also acknowledged for financial support by Luis Amaral (SFRH/BD/40927/2007 and SFRH/BPD/97453/2013) and Alexander Tkach (IF/00602/2013). The authors thank Rainer Schmidt for the helpful discussion of the IS results and Ian Reaney for TEM data acquisition and analysis.