Local domain engineering in relaxor 0.77PbMg(1/3)Nb(2/3)O(3)-0.23PbSc(1/2)Nb(1/2)O(3) single crystals


We used piezoresponse force microscopy (PFM) to study the dc bias field-induced domain structure of the (001) oriented single crystals of 0.77PbMg(1/3)Nb(2/3)O(3)-0.23PbSc(1/2)Nb(1/2)O(3) relaxor. In the as-grown state, no polarization contrast was observed due to the average cubic symmetry of the crystal. Upon application of a dc bias applied via a PFM tip, a stable complex domain pattern, corresponding to a hedgehog-type topological defect, appeared on the surface of the crystal. The shape of these domains depended on the magnitude of the field. If the field was below a threshold, the domains possessed a cylindrical form. Above the threshold, the border between domains became close to a straight line. At high biases and large separation between the pulses, the development of the domains obeyed an avalanche-type dynamics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624812]






Bdikin, IK; Gracio, J; Kiselev, DA; Raevskaya, SI; Raevski, IP; Prosandeev, SA; Kholkin, AL

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