Low-temperature dielectric response of NaTaO3 ceramics and films
authors Tkach, A; Almeida, A; Moreira, JA; de la Cruz, JP; Romaguera-Barcelay, Y; Vilarinho, PM
nationality International
keywords THIN-FILMS
abstract In this work, NaTaO3 ceramics are prepared by conventional mixed oxide method and NaTaO3 films are deposited by RF magnetron sputtering on Si/SiO2/TiO2/Pt substrates. The dielectric response of the obtained NaTaO3 ceramics and films is analyzed as a function of frequency and temperature. Between 1 kHz and 1MHz, the dielectric permittivity of NaTaO3 ceramics is frequency independent and increases on cooling up to similar to 324, which is the highest value ever reported for NaTaO3 ceramics. In contrast, NaTaO3 films exhibit a dielectric relaxation between similar to 20 and 30K, following the Arrhenius law with activation energy similar to 51 meV and pre-exponential term similar to 10(-15) s and attributed to polaron hopping. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714527]
issn 0003-6951
year published 2012
volume 100
issue 19
digital object identifier (doi) 10.1063/1.4714527
web of science category Physics, Applied
subject category Physics
unique article identifier WOS:000304108000067
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