High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors

abstract

Single-crystal field-effect transistors (FETs) based on a fluorocarbon-substituted dicyanoperylene-3,4:9, 10-bis(dicarboximide) [PDIF-CN2] were fabricated by lamination of the semiconductor crystal on Si-SiO2/PMMA-Au gate-dielectric-contact substrates. These devices were characterized both in vacuum and in the air, and they exhibit electron mobilities of ca. 6-3 and ca. 3-1 cm(2) V-1 s(-1), respectively, I-on:I-off > 10(3), and near-zero threshold voltage.

keywords

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; N-TYPE; HIGH-PERFORMANCE; ORGANIC SEMICONDUCTORS; FUNCTIONALIZED ACENES; GATE DIELECTRICS; AIR; DERIVATIVES; TRANSPORT

subject category

Chemistry

authors

Molinari, AS; Alves, H; Chen, Z; Facchetti, A; Morpurgo, AF

our authors

acknowledgements

We are grateful to NanoNed and NWO for financial support. H.A. also acknowledges FCT for financial support under contract no. SFRH/BPD/34333/2006.

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