abstract
Phase formation under high pressure int he chalcopyrite-delafossite system has been studied at 5 GPa and 500-1000 degrees C. The parent chalcopyrite composition used in this study was slightly Cu-deficient, corresponding to the chemical formula (Cu,Ga)(0.905)GaS2. It was revealed that under high-pressure and high-temperature conditions, a mixture of the parent phases partly decomposes to form Cu2S and Ga2O3. The defect chalcopyrite (Cu,Ga)(0.905)GaS2 splits into a near-stoichiometric CuGaS2 and Cu-deficient subic (sphalerite-like) phase of the (Cu,Ga)(0.8)S composition. Such a phenomenon has been considered in terms of characteristic features of chalcopyrite and sphalerite crystal structures. Delafossite CuGaO2 at 5 GPa and 1000 degrees C was found to recrystallize entirely, which results in the disappearance of the stacking faults in its layered structure. [GRAPHICS] (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
keywords
SOLAR-CELLS; DIFFRACTION
subject category
Physics
authors
Salak, AN; Zhaludkevich, AL; Ignatenko, OV; Lisenkov, AD; Yaremchenko, AA; Zheludkevich, ML; Ferreira, MGS
our authors
Aleksey Lisenkov
Junior Researcher
Aleksey Yaremchenko
Principal Researcher
Andrei Salak
Principal Researcher
Mário Guerreiro Silva Ferreira
Retired Professor
Mikhail Zheludkevich
Invited Principal Researcheracknowledgements
This work was supported by the EU Program