Composition measurement of epitaxial ScxGa1-xN films

abstract

Four different methods for measuring the compositions of epitaxial ScxGa1-xN films were assessed and compared to determine which was the most reliable and accurate. The compositions of epitaxial ScxGa1-xN films with 0 <= x <= 0.26 were measured directly using Rutherford backscattering (RBS) and x-ray photoelectron spectroscopy (XPS), and indirectly using c lattice parameter measurements from x-ray diffraction and c/a ratio measurements from electron diffraction patterns. RBS measurements were taken as a standard reference. XPS was found to underestimate the Sc content, whereas c lattice parameter and c/a ratio were not reliable for composition determination due to the unknown degree of strain relaxation in the film. However, the Sc flux used during growth was found to relate linearly with x and could be used to estimate the Sc content.

keywords

SCANDIUM NITRIDE FILMS; THIN-FILMS; BAND-GAP; INGAN EPILAYERS; GROWTH; SCGAN; MICROSTRUCTURE; SURFACE; PLASMA; LAYERS

subject category

Engineering; Materials Science; Physics

authors

Tsui, HCL; Goff, LE; Barradas, NP; Alves, E; Pereira, S; Palgrave, RG; Davies, RJ; Beere, HE; Farrer, I; Ritchie, DA; Moram, MA

our authors

acknowledgements

MAM acknowledges support through a Royal Society University Research Fellowship, through ERC Starting Grant 'SCOPE' and through a Leverhulme Research Leadership Award (RL-2012-007).

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