abstract
Functional oxide thin films integrated into complementary metal oxide semiconductor technology often exhibit degraded properties with respect to bulk materials because of complex interfacial phenomena. In this contribution, we demonstrate that a sol-gel LaNiO3 (LNO) interlayer deposited onto the surface of a Pt/TiO2/SiO2/Si substrate prior to growth of sol-gel BiScO3-PbTiO3 (BSPT) films acts: (i) to seed nucleation of perovskite structured; (ii) to template growth to give controlled orientation and enhanced crystallinity; and (iii) as a sink for oxygen vacancies (V-O). The LNO interlayer therefore not only improves the ferroelectric, piezoelectric, and dielectric properties but also reduces leakage current and prevents degradation of the remanent polarization during fatigue tests. We propose that the use of a LNO interfacial layer may offer a generic solution to interfacial degradation in functional oxide films.
keywords
LEAD-ZIRCONATE-TITANATE; PIEZOELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES; DIELECTRIC-PROPERTIES; SEED LAYER; CRYSTAL; GROWTH; SI; ELECTRODES; THICKNESS
subject category
Chemistry; Crystallography; Materials Science
authors
Xiao, JZ; Tomczyk, M; Reaney, IM; Vilarinho, PM
our authors
Monika Malgorzata Tomczyk
PhD Student
Paula Maria Lousada Silveirinha Vilarinho
Vice Directoracknowledgements
This work was funded by FEDER funds via Programa Operational Factores de Competitividade - COMPETE and National funds via FCT (Fundacao para a Ciencia e Tecnologia) within the Project CICECO - FCOMP-01-0124-FEDER-037271 (FCT PEst-C/CTM/LA0011/2013). I.M.R. acknowledges the support of the Engineering and Physical Sciences Research Council Grant EP/L017563/1.