authors |
Seol, D; Kim, S; Jang, WS; Jin, Y; Kang, S; Kim, S; Won, D; Lee, C; Kim, YM; Lee, J; Yang, H; Jeong, MS; Belianinov, A; Tselev, A; Somnath, S; Smith, CR; Ovchinnikova, OS; Balke, N; Kim, Y |
nationality |
International |
journal |
NANO ENERGY |
author keywords |
Transition-metal dichalcogenides; Out-of-plane piezoelectricity; Defect formation; Inversion symmetry breaking; Ion beam irradiation |
keywords |
ATOMIC-LAYER MOS2; CARBON CONTAMINATION; TRANSPORT-PROPERTIES; FORCE MICROSCOPY; MONOLAYER MOS2; TRANSITION; SUBSURFACE; ENERGY; DAMAGE |
abstract |
Two-dimensional transition-metal dichalcogenides (TMDs) have a strain-sensitive nature and can only exhibit in plane piezoelectricity, owing to their in-plane inversion symmetry breaking, which limits their practical applications for vertical stimulations. In this study, we demonstrated the capability of focused ion beams to create out of-plane piezoelectricity on multi-layered MoTe2. We utilized a focused helium ion beam to selectively pattern the out-of-plane piezoelectricity via defect engineering in a layered MoTe2 flake. The generated out-of-plane piezoelectricity in the desired area was quantitatively examined using atomic force microscopy, and ion beam irradiation-induced defect formation that gave rise to inversion symmetry breaking was confirmed. These results indicated that the out-of-plane piezoelectricity can be selectively patterned through a focused helium ion beam, and it is expected that this approach can also be applied to other classes of TMDs and can expand the application fields of TMD-based devices. |
publisher |
ELSEVIER |
issn |
2211-2855 |
isbn |
2211-3282 |
year published |
2021 |
volume |
79 |
digital object identifier (doi) |
10.1016/j.nanoen.2020.105451 |
web of science category |
9 |
subject category |
Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied |
unique article identifier |
WOS:000620324700005
|
ciceco authors
impact metrics
journal analysis (jcr 2019):
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journal impact factor |
16.602 |
5 year journal impact factor |
15.988 |
category normalized journal impact factor percentile |
94.793 |
dimensions (citation analysis):
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altmetrics (social interaction):
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