Low-Temperature Dielectric Response of Strontium Titanate Thin Films Manipulated by Zn Doping


The voltage dependence of the dielectric permittivity epsilon ' and the low dielectric loss tan delta of incipient ferroelectrics have drawn vast attention to the use of these materials for the development of tuning elements in electronics and telecommunications. Here, we study the DC electric field dependence of low-temperature epsilon ' in ~320 nm thick sol-gel-derived SrTi1-xZnxO3-delta thin films with x = 0.01 and 0.05, deposited on Pt/TiO2/SiO2/Si substrates. Incorporation of Zn onto Ti sites is found to decrease epsilon ' compared to undoped SrTiO3 films, while increasing the relative tunability n(r) up to ~32.9% under a DC electric field of 125 kV/cm at low temperatures. The hysteresis-free variation in epsilon ' with electric field and tan delta values below 0.6% observed for SrTi1-xZnxO3-delta film with x = 0.01 make this compound more attractive for tunable device applications.



subject category

Chemistry; Materials Science; Metallurgy & Metallurgical Engineering; Physics


Okhay, O; Vilarinho, PM; Tkach, A

our authors


This work was developed within the scope of the CICECO-Aveiro Institute of Materials projects UIDB/50011/2020 and UIDP/50011/2020, FLEXIDEVICE project PTDC/CTMCTM/29671/2017, as well as projects UIDB/00481/2020 and UIDP/00481/2020, financed by national funds through the Portuguese Foundation for Science and Technology/MCTES, and CENTRO-01-0145-FEDER-022083-Centro Portugal Regional Operational Programme (Centro2020), under PORTUGAL 2020 Partnership Agreement, through the European Regional Development Fund.

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