a-Si : H TFT enhancement by plasma processing of the insulating/semiconductor interface
authors Lavareda, G; de Carvalho, CN; Amaral, A; Fortunato, E; Vilarinho, P
nationality International
journal MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
author keywords TFT; a-SiNx; a-SiCx; interface; plasma processing
keywords THIN-FILM TRANSISTORS; NITRIDE
abstract Thin film transistors (TFTs) made of silicon nitride and silicon carbide as dielectric were submitted to N-2, H-2 and O-2 plasma treatment of the insulator/semiconductor interface. Silicon nitride is widely used as gate dielectric with very good bulk properties but with network matching problems at the interface with amorphous silicon. Carbon-rich silicon carbide can be an alternative as dielectric material, presenting improved SiC/a-Si interface properties, but having lower bulk performance. The purpose of such interface plasma processing is to passivate, oxidize or insert nitrogen atoms into the last deposited monolayers and observe the effect of ion bombardment in the interface. Results show an increase of the field effect mobility from 0.38 to 0.51 cm(2) V-1 s(-1) in the passivated (hydrogenated) a-SiNx TFrs. An improvement is also observed in a-SiCx TFTs treated with H-2 plasma, but less evident. Some correlation has been found between H bonding in insulating films, extracted by FTIR measurements and the different response found for a-SiCx and a-SiNx based TFTs to H-2 plasma treatment. (C) 2003 Elsevier B.V. All rights reserved.
publisher ELSEVIER SCIENCE SA
issn 0921-5107
year published 2004
volume 109
issue 1-3
beginning page 264
ending page 268
digital object identifier (doi) 10.1016/j.mseb.2003.10.079
web of science category Materials Science, Multidisciplinary; Physics, Condensed Matter
subject category Materials Science; Physics
unique article identifier WOS:000221657000057
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