abstract
The effects of several process parameters, such as substrate temperature. nucleation density, and substrate surface pretreatment, oil the simultaneous formation of SiC and diamond under typical growth conditions of diamond by microwave plasma assisted chemical vapor deposition (MPCVD). have been investigated by scanning electron microscopy (SEM), X-ray diffraction. and Raman and Fourier-transfer infrared (FTIR) spectroscopy. Results show that no SiC can be detected in the diamond films grown with a high nucleation density, whereas, SiC is detected in the thick diamond films grown with a low nucleation density, with or without surface pretreatment of the Si substrates. SEM micro-graphs and FTIR spectra illustrate that SiC is formed on the Si substrate not covered by diamond nuclei Or ill void regions between diamond nuclei. The formation of SIC and diamond oil Si substrates under the growth conditions of diamond by MPCVD is a concurrent competitive deposition process, especially at the initial stage of diamond nucleation and growth. This is all alternative method for the synthesis of diamond-SiC composites by MPCVD.
keywords
BIAS-ENHANCED NUCLEATION; CVD DIAMOND; POLYCRYSTALLINE DIAMOND; ORIENTED DIAMOND; COMPOSITE FILMS; GROWTH; SPECTROSCOPY; HFCVD; INTERFACE; MECHANISM
subject category
Materials Science
authors
Tang, CJ; Fu, LS; Fernandes, AJS; Soares, MJ; Cabral, G; Neves, AJ; Gracio, J
our authors
Lianshe Fu
Assistant Researcheracknowledgements
C. J. T and L. S. F greatly appreciate the financial support from