Thermal stability and crystallization kinetics of ternary Se-Te-Sb semiconducting glassy alloys

abstract

This paper presents the results of kinematical studies of glass transition and crystallization in glassy Se85-x Te15Sb (x) (x = 2, 4, 6 and 8) using differential scanning calorimetry (DSC). From the dependence on heating rates of, the glass transition temperatures (T (g)), and temperature of crystallization (T (p)) the activation energy for glass transition (E (g)) and the activation energy for crystallization (E (c)) are calculated and their composition dependence can be discussed in term of the average coordination number and cohesive energy. The thermal stability of Se85-x Te15Sb (x) was evaluated in terms of criterion Delta T = T (c) - T (g) and kinetic criteria K(T (g)) and K(T (p)). By analyzing the crystallization results, the crystallization mechanism is characterized. Two (two- and three-dimensional growth) mechanisms are working simultaneously during the amorphous-crystalline transformation of the Se83Te15Sb3 alloy while only one (three-dimensional growth) mechanism is responsible for the crystallization process of the chalcogenides Se85-x Te15Sb (x) (x = 4, 6 and 8) glass. The phases at which the alloy crystallizes after the thermal process have been identified by X-ray diffraction.

keywords

PHASE-CHANGE; THIN-FILMS; SYSTEM; TRANSFORMATIONS

subject category

Thermodynamics; Chemistry

authors

Shaaban, ER; Kansal, I; Shapaan, M; Ferreira, JMF

our authors

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