resumo
Bias voltage dependent domain dynamics have been investigated on the surface of La0.89Sr0.11MnO3 (LSMO-0.11) single crystals by Piezoresponse Force Microscopy (PFM). The created domain size increases with both the amplitude and duration of the bias voltage pulse. It is observed that domain growth takes place following an activated process wherein the domain wall interacts with the defects (e.g. oxygen vacancies) resulting from the high electric field under the PFM tip. Fractal analysis, based on the interaction of the domain boundary with the defects, provides the Hausdorff fractal dimension value similar to 1.3, lower than that usually observed for solid-state crystalline ferroelectrics indicating a smaller correlation length value for LSMO-0.11 crystal. These studies reveal a clear potential of LSMO for new memory devices based on ferroelectric-like domain states in manganites. (C) 2013 Elsevier Ltd. All rights reserved.
palavras-chave
THIN-FILMS
categoria
Physics
autores
Panwar, N; Coondoo, I; Kholkin, AL
nossos autores
Andrei Kholkin
Investigador Principal
Indrani Coondoo
Investigador Júnior
Neeraj Panwar
Bolseiro de pós-DoutoramentoGrupos
G2 - Materiais Fotónicos, Eletrónicos e Magnéticos
G4 - Materiais Renováveis e Economia Circular
Projectos
MULTIFOX: Nanometric Probing and Modification of Multiferroic Oxides (PTDC/FIS/105416/2008)
agradecimentos
One of the authors (N.P.) would like to thank Portuguese Foundation for Science and Technology (FCT) for the financial support through postdoctoral grant (SFRH/BPD/71289/2010). The FCT project MULTIFOX (PTDC/FIS/105416/2008) and Center for Research in Ceramic and Composite Materials (CICECO) of the University of Aveiro are acknowledged for partial support. The authors highly appreciate the help of Dr. A. M. Balbashov for providing the high quality LSMO-0.11 single crystals used in the present study.