abstract
Bias voltage dependent domain dynamics have been investigated on the surface of La0.89Sr0.11MnO3 (LSMO-0.11) single crystals by Piezoresponse Force Microscopy (PFM). The created domain size increases with both the amplitude and duration of the bias voltage pulse. It is observed that domain growth takes place following an activated process wherein the domain wall interacts with the defects (e.g. oxygen vacancies) resulting from the high electric field under the PFM tip. Fractal analysis, based on the interaction of the domain boundary with the defects, provides the Hausdorff fractal dimension value similar to 1.3, lower than that usually observed for solid-state crystalline ferroelectrics indicating a smaller correlation length value for LSMO-0.11 crystal. These studies reveal a clear potential of LSMO for new memory devices based on ferroelectric-like domain states in manganites. (C) 2013 Elsevier Ltd. All rights reserved.
keywords
THIN-FILMS
subject category
Physics
authors
Panwar, N; Coondoo, I; Kholkin, AL
our authors
Andrei Kholkin
Principal Researcher
Indrani Coondoo
Junior Researcher
Neeraj Panwar
Post-doc FellowshipGroups
G2 - Photonic, Electronic and Magnetic Materials
G4 - Renewable Materials and Circular Economy
Projects
MULTIFOX: Nanometric Probing and Modification of Multiferroic Oxides (PTDC/FIS/105416/2008)
acknowledgements
One of the authors (N.P.) would like to thank Portuguese Foundation for Science and Technology (FCT) for the financial support through postdoctoral grant (SFRH/BPD/71289/2010). The FCT project MULTIFOX (PTDC/FIS/105416/2008) and Center for Research in Ceramic and Composite Materials (CICECO) of the University of Aveiro are acknowledged for partial support. The authors highly appreciate the help of Dr. A. M. Balbashov for providing the high quality LSMO-0.11 single crystals used in the present study.