Experimental and computational investigations of the photosensitive Schottky barrier diode property of an azobenzene based small organic molecule
authors Banerjee, S; Dey, A; Ghorai, P; Brandao, P; Ortega-Castro, J; Frontera, A; Ray, PP; Saha, A
nationality International
journal NEW JOURNAL OF CHEMISTRY
keywords GENERALIZED GRADIENT APPROXIMATION; MEMORY DEVICE; N-VINYLCARBAZOLE; ELECTRIC-FIELD; THIN-FILMS; POLYMERS; SEMICONDUCTORS; PERFORMANCE; SURFACES; EXCHANGE
abstract Azo based organic semiconductor molecules are mostly used as write once, read-many-times (WORM) memory systems. Therefore, a large scope still remains in the fabrication of photoconducting azo compounds, which can be used under acute conditions for advanced applications. In this context we have designed a very simple, small azo based organic molecule, viz. [1,4-phenylenebis(azanylylidene)bis(methanylylidene)bis(2-methoxy-4-(phenyldiazenyl)phenol)] (compound 1). The device fabricated using compound 1 showed Schottky barrier behavior. The value of the rectification ratio is 6.22 and 18.27 under dark and photoirradiated conditions, respectively. Thermally stable and low cost compound 1 can be used in the area of optoelectronic devices probably being the first azo-organic material showing such properties. Experimentally measured optical conductivity is again correlated theoretically using DFT computation. It has been observed that the change in the dihedral angle produces a decrease in the energy for the allowed electronic transition.
publisher ROYAL SOC CHEMISTRY
issn 1144-0546
year published 2018
volume 42
issue 16
beginning page 13430
ending page 13441
digital object identifier (doi) 10.1039/c8nj02193g
web of science category Chemistry, Multidisciplinary
subject category Chemistry
unique article identifier WOS:000445827700021
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