abstract
Azo based organic semiconductor molecules are mostly used as write once, read-many-times (WORM) memory systems. Therefore, a large scope still remains in the fabrication of photoconducting azo compounds, which can be used under acute conditions for advanced applications. In this context we have designed a very simple, small azo based organic molecule, viz. [1,4-phenylenebis(azanylylidene)bis(methanylylidene)bis(2-methoxy-4-(phenyldiazenyl)phenol)] (compound 1). The device fabricated using compound 1 showed Schottky barrier behavior. The value of the rectification ratio is 6.22 and 18.27 under dark and photoirradiated conditions, respectively. Thermally stable and low cost compound 1 can be used in the area of optoelectronic devices probably being the first azo-organic material showing such properties. Experimentally measured optical conductivity is again correlated theoretically using DFT computation. It has been observed that the change in the dihedral angle produces a decrease in the energy for the allowed electronic transition.
keywords
GENERALIZED GRADIENT APPROXIMATION; MEMORY DEVICE; N-VINYLCARBAZOLE; ELECTRIC-FIELD; THIN-FILMS; POLYMERS; SEMICONDUCTORS; PERFORMANCE; SURFACES; EXCHANGE
subject category
Chemistry
authors
Banerjee, S; Dey, A; Ghorai, P; Brandao, P; Ortega-Castro, J; Frontera, A; Ray, PP; Saha, A
our authors
Paula Cristina Ferreira da Silva Brandão
Assistant Researcheracknowledgements
A. S. gratefully acknowledges the financial support of this work by the DST, India (Sanction No. SB/FT/CS-102/2014, dated 18.07.2015). A. F. gratefully acknowledges the financial support of this work by the DGICYT of Spain (projects CTQ2014-57393-C2-1-P and CONSOLIDER INGENIO 2010 CSD2010-00065, FEDER funds). A. F. thanks the CTI (UIB) for free allocation of computer time.