Resistive switching of silicon-silver thin film devices in flexible substrates


Novel applications for memory devices demand nanoscale flexible structures. In particular, resistive switching (RS) devices are promising candidates for wearable and implantable technologies. Here, the Pt/Si/Ag/TiW metal-insulator-metal structure was fabricated and characterized on top of flexible substrates using a straightforward microfabrication process. We also showed that these substrates are compatible with sputtering deposition. RS was successfully achieved using both commercial cellulose cleanroom paper and bacterial cellulose, and polymer (PET) substrates. The bipolar switching behavior was observed for both flat and bent (under a radius of 3.5 mm) configurations. The observed phenomenon was explained by the formation/rupture of metallic Ag filaments in the otherwise insulating Si host layer.




Science & Technology - Other Topics; Materials Science; Physics


Dias, C; Leitao, DC; Freire, CSR; Gomes, HL; Cardoso, S; Ventura, J

nossos autores


This work was supported in part by projects PTDC/CTM-NAN/122868/2010, PTDC/CTM-NAN/3146/2014, PTDC/NAN-MAT/31688/2017, UID/CTM/50011/2019, UID/EEA/50008/2019 and POCI-01-0145-FEDER-016623. This work was also partially supported by FEDER (Fundo Europeu de Desenvolvimento Regional) funds through the COMPETE 2020 Operational Programme for Competitiveness and Internationalisation (POCI), Portugal 2020 and by Portuguese funds through FCT (Fundacao para a Ciencia e a Tecnologia) and Ministerio da Ciencia, Tecnologia e Inovacao in the framework of the project Institute for Research and Innovation in Health Sciences (POCI-010145 FEDER007274) and through the Associated LaboratoryInstitute of Nanoscience and Nanotechnology. JV acknowledges financial support through FSE/POPH. C Dias is thankful to FCT for grant SFRH/BD/101661/2014. D Leitao acknowledges financial support through FSE/POPH. FCT is also acknowledged for the research contract under Stimulus of Scientific Employment 2017 to CSR Freire (CEECIND/00464/2017). INESC-MN acknowledges FCT funding through the IN Associated Laboratory and National Infrastructure Roadmap NORTE-01-0145-FEDER-22090.

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