Resistive switching of silicon-silver thin film devices in flexible substrates
authors Dias, C; Leitao, DC; Freire, CSR; Gomes, HL; Cardoso, S; Ventura, J
nationality International
journal NANOTECHNOLOGY
author keywords resistive switching; memristors; flexible electronics; cellulose-based electronics; metallic filaments
keywords SYNAPTIC PLASTICITY; NONVOLATILE MEMORY; RESISTANCE; HYBRID
abstract Novel applications for memory devices demand nanoscale flexible structures. In particular, resistive switching (RS) devices are promising candidates for wearable and implantable technologies. Here, the Pt/Si/Ag/TiW metal-insulator-metal structure was fabricated and characterized on top of flexible substrates using a straightforward microfabrication process. We also showed that these substrates are compatible with sputtering deposition. RS was successfully achieved using both commercial cellulose cleanroom paper and bacterial cellulose, and polymer (PET) substrates. The bipolar switching behavior was observed for both flat and bent (under a radius of 3.5 mm) configurations. The observed phenomenon was explained by the formation/rupture of metallic Ag filaments in the otherwise insulating Si host layer.
publisher IOP PUBLISHING LTD
issn 0957-4484
isbn 1361-6528
year published 2020
volume 31
issue 13
digital object identifier (doi) 10.1088/1361-6528/ab5eb7
web of science category Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied
subject category Science & Technology - Other Topics; Materials Science; Physics
unique article identifier WOS:000518976500001
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  impact metrics
journal analysis (jcr 2019):
journal impact factor 3.551
5 year journal impact factor 3.392
category normalized journal impact factor percentile 63.589
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