Metal induced crystallization: Gold versus aluminium

authors	Pereira, L; Aguas, H; Vilarinho, P; Fortunato, E; Martins, R
nationality	International
journal	JOURNAL OF MATERIALS SCIENCE
keywords	AMORPHOUS-SILICON
abstract	In this work metal induced crystallization was studied using aluminium and gold deposited over 150 nm amorphous silicon films grown by LPCVD. Aluminium and gold layers with thickness between 1 and 5 nm were deposited on the silicon films and after that, the samples were annealed at 500 degrees C from 5 up to 30 h. When the crystallization is induced through a gold layer, the Si crystalline fraction is higher than when using aluminium. For samples crystallized for 30 h at 500 degrees C with 2 nm of metal a crystalline fraction of 57.5% was achieved using gold and only 38.7% when using aluminium. (C) 2005 Springer Science + Business Media, Inc.
publisher	SPRINGER
issn	0022-2461
year published	2005
volume	40
issue	6
beginning page	1387
ending page	1391
digital object identifier (doi)	10.1007/s10853-005-0571-5
web of science category	Materials Science, Multidisciplinary
subject category	Materials Science
unique article identifier	WOS:000227956200013