authors |
Pereira, L; Aguas, H; Vilarinho, P; Fortunato, E; Martins, R |
nationality |
International |
journal |
JOURNAL OF MATERIALS SCIENCE |
keywords |
AMORPHOUS-SILICON |
abstract |
In this work metal induced crystallization was studied using aluminium and gold deposited over 150 nm amorphous silicon films grown by LPCVD. Aluminium and gold layers with thickness between 1 and 5 nm were deposited on the silicon films and after that, the samples were annealed at 500 degrees C from 5 up to 30 h. When the crystallization is induced through a gold layer, the Si crystalline fraction is higher than when using aluminium. For samples crystallized for 30 h at 500 degrees C with 2 nm of metal a crystalline fraction of 57.5% was achieved using gold and only 38.7% when using aluminium. (C) 2005 Springer Science + Business Media, Inc. |
publisher |
SPRINGER |
issn |
0022-2461 |
year published |
2005 |
volume |
40 |
issue |
6 |
beginning page |
1387 |
ending page |
1391 |
digital object identifier (doi) |
10.1007/s10853-005-0571-5 |
web of science category |
Materials Science, Multidisciplinary |
subject category |
Materials Science |
unique article identifier |
WOS:000227956200013
|