resumo
The characterization of sol-gel derived morphotropic phase boundary (MPB) 0.37BiScO(3)-0.63PbTiO(3) (BSPT) thin films, deposited on IrO2/TiO2/SiO2/Si and Pt/TiO2/SiO2/Si substrates, was performed to identify the influence of the IrO2 electrodes on the film's microstructure and electrical properties. Though the ferroelectric behaviour of both films is similar, with remanent polarization values of 26 mu C cm(-2) and 23 mu C cm(-2), respectively, for IrO2 and Pt bottom electroded films, the leakage current density (J(L)) at room temperature markedly decreases from > 10(-6) A cm(-2) for BSPT on Pt to the order of <= 10(-8) A cm(-2) for BSPT on IrO2, under the maximum voltage of 4 V (similar to 80 kV cm(-1)). The formation of an interface layer between the film and the electrode, as observed by Rutherford Backscattering Spectroscopy, is proposed to have a space charge sink effect and, as a consequence, to account for the improvement of the leakage current behaviour of the IrO2 electroded films.
palavras-chave
MORPHOTROPIC PHASE-BOUNDARY; PEROVSKITE SYSTEM; EPITAXIAL-FILMS; SINGLE-CRYSTALS; SPACE-CHARGE; TEMPERATURE; (1-X)BISCO3-XPBTIO(3); CAPACITORS; CERAMICS; FATIGUE
categoria
Chemistry; Materials Science
autores
Xiao, JZ; Wu, AY; Vilarinho, PM; Ramos, AR; Alves, E
nossos autores
Aiying Wu
Investigador
Paula Maria Lousada Silveirinha Vilarinho
Vice-Diretoragradecimentos
The authors acknowledge the financial support from FEDER, FCT, POCI 2010, CICECO, and FAME Network, under the contract FP6-500159-1. Jingzhong Xiao acknowledges financial support of FCT under the contract SFRH/BPD/20265/2004.