Tuning optical and ferromagnetic properties of thin GdN films by nitrogen-vacancy centers
authors Vidyasagar, R; Kitayama, S; Yoshitomi, H; Kita, T; Sakurai, T; Ohta, H
nationality International
journal EUROPEAN PHYSICAL JOURNAL B
keywords SEMICONDUCTORS
abstract AlN/GdN/AlN double heterostructures were grown on c-sapphire substrates using a reactive rf sputtering method under high vacuum conditions. The optical absorption spectrum of the GdN shows a clear fundamental band edge of GdN around 800 nm; this transition is attributed to the minority spin band energy of GdN at the X point. Nitrogen vacancy centers cause a blue-shift of the optical band edge of GdN, which could be ascribed to both the band filling, and the electron-hole interactions resulting from the free carriers generated by nitrogen vacancies. Temperature-dependent magnetization measurements demonstrate a clear change in the magnetization values of GdN with respect to the N-2 partial pressure. Nitrogen vacancy centers in the thin GdN film raise the Curie temperature from 31 K to 39 K, which has been accurately measured by the Arrott plots.
publisher SPRINGER
issn 1434-6028
year published 2013
volume 86
issue 2
digital object identifier (doi) 10.1140/epjb/e2012-30566-3
web of science category Physics, Condensed Matter
subject category Physics
unique article identifier WOS:000316064100022
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journal analysis (jcr 2019):
journal impact factor 1.347
5 year journal impact factor 1.32
category normalized journal impact factor percentile 26.812
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