Perovskite ferroelectric thin film as an efficient interface to enhance the photovoltaic characteristics of Si/SnO(x)heterojunctions


The photovoltaic (PV) response of SnOx/Si heterojunctions (HJs) through the change of the SnO and SnO(2)ratio in the samples that allows us to obtain p- or n-type SnO(x)films is investigated in this work. The values of short-circuit photocurrent density (J(sc)), open-circuit voltage (V-OC), fill factor (FF) and power conversion efficiency (PCE) are found to be 12.6 mA cm(-2), 0.23 V, 27% and 8.3%, for the p-SnOx/n-Si HJ and 10.3 mA cm(-2), 0.20 V, 20% and 4.5% for the n-SnOx/p-Si HJ. The enhanced PV effect observed in the p-SnOx/n-Si HJs can be attributed to a small band offset between SnO(x)and Si, which lowers the diffusion length that can contribute to higher recombination rate and smaller series resistance. Furthermore, the values ofJ(sc),V-OC, FF and PCE were enhanced up to 30.9 mA cm(-2), -2.0 V, 19% and 10.9%, respectively, through the insertion of a 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3(BCZT) ferroelectric layer between n-Si and p-SnOx. The built-in field developed at the Si/BCZT/SiOx/SnO(x)interfaces together with the depolarizing field, provides a favorable electric potential for the separation and further transport of photo generated electron-hole (e-h) pairs. This work provides a viable approach by combining ferroelectrics with p-SnOx/n-Si HJs for building efficient ferroelectric-based solar cells.



subject category

Chemistry; Energy & Fuels; Materials Science


Silva, JPB; Vieira, EMF; Silva, JMB; Gwozdz, K; Figueiras, FG; Veltruska, K; Matolin, V; Istrate, MC; Ghica, C; Sekhar, KC; Kholkin, AL; Goncalves, LM; Chahboun, A; Pereira, M

our authors



This work was supported by: (i) the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding Contracts UIDB/04650/2020 and the Scientific and Technological Cooperation Program between Portugal (FCT) and Morocco (CNRST) - 2019/2020; (ii) the reference project UID/EEA/04436/2013, by FEDER funds through the COMPETE 2020 - Programa Operacional Competitividade e Internacionalizacao (POCI) with the reference project POCI-01-0145-FEDER-006941; (iii) CMEMS-UMinho Strategic Project UIDB/04436/2020 and UIDP/04436/2020; (iv) the Programa Operacional Regional do Norte (NORTE2020), through Fundo Europeu de Desenvolvimento Regional (FEDER), Project NORTE-01-0145-FEDER-000032, NextSea; (v) DST-SERB, Govt. of India through Grant No. ECR/2017/00006; (vi) the statutory grant (No. 8201003902) of Department of Quantum Technologies of Wroclaw University of Science and Technology an (vii) the project CICECO-Aveiro Institute of Materials, UIDB/50011/2020 & UIDP/50011/2020, financed by national funds through the FCT/MEC and when appropriate co-.nanced by FEDER under the PT2020 Partnership Agreement. The authors acknowledge the CERIC-ERIC Consortium for access to experimental facilities and.nancial support under proposal 20192056. The authors would like also to thank engineer Jos ' e Santos for technical support at the Thin Film Laboratory.

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