authors |
Coutinho, J; Gouveia, JD; Makino, T; Ohshima, T; Pastuovic, Z; Bakrac, L; Brodar, T; Capan, I |
nationality |
International |
journal |
PHYSICAL REVIEW B |
keywords |
TOTAL-ENERGY CALCULATIONS; DEFECT SPIN QUBITS; INTRINSIC DEFECTS; SILICON; IDENTIFICATION |
abstract |
The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil its real importance for almost two decades. Using advanced first-principles calculations and junction spectroscopy, we demonstrate that the properties of M, including bistability, annealing, reconfiguration kinetics, and electronic levels match those of the carbon self-interstitial. |
publisher |
AMER PHYSICAL SOC |
issn |
2469-9950 |
isbn |
2469-9969 |
year published |
2021 |
volume |
103 |
issue |
18 |
digital object identifier (doi) |
10.1103/PhysRevB.103.L180102 |
web of science category |
5 |
subject category |
Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter |
unique article identifier |
WOS:000655900400006
|
ciceco authors
impact metrics
journal analysis (jcr 2019):
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journal impact factor |
3.575 |
5 year journal impact factor |
3.511 |
category normalized journal impact factor percentile |
70.187 |
dimensions (citation analysis):
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altmetrics (social interaction):
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