M center in 4H-SiC is a carbon self-interstitial

authors	Coutinho, J; Gouveia, JD; Makino, T; Ohshima, T; Pastuovic, Z; Bakrac, L; Brodar, T; Capan, I
nationality	International
journal	PHYSICAL REVIEW B
keywords	TOTAL-ENERGY CALCULATIONS; DEFECT SPIN QUBITS; INTRINSIC DEFECTS; SILICON; IDENTIFICATION
abstract	The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil its real importance for almost two decades. Using advanced first-principles calculations and junction spectroscopy, we demonstrate that the properties of M, including bistability, annealing, reconfiguration kinetics, and electronic levels match those of the carbon self-interstitial.
publisher	AMER PHYSICAL SOC
issn	2469-9950
isbn	2469-9969
year published	2021
volume	103
issue	18
digital object identifier (doi)	10.1103/PhysRevB.103.L180102
web of science category	5
subject category	Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
unique article identifier	WOS:000655900400006