M center in 4H-SiC is a carbon self-interstitial
authors Coutinho, J; Gouveia, JD; Makino, T; Ohshima, T; Pastuovic, Z; Bakrac, L; Brodar, T; Capan, I
nationality International
journal PHYSICAL REVIEW B
keywords TOTAL-ENERGY CALCULATIONS; DEFECT SPIN QUBITS; INTRINSIC DEFECTS; SILICON; IDENTIFICATION
abstract The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil its real importance for almost two decades. Using advanced first-principles calculations and junction spectroscopy, we demonstrate that the properties of M, including bistability, annealing, reconfiguration kinetics, and electronic levels match those of the carbon self-interstitial.
publisher AMER PHYSICAL SOC
issn 2469-9950
isbn 2469-9969
year published 2021
volume 103
issue 18
digital object identifier (doi) 10.1103/PhysRevB.103.L180102
web of science category 5
subject category Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
unique article identifier WOS:000655900400006
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journal analysis (jcr 2019):
journal impact factor 3.575
5 year journal impact factor 3.511
category normalized journal impact factor percentile 70.187
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