Local structure of luminescent InGaN alloys

abstract

Comparative Ga and In K-edge extended x-ray absorption fine structure studies provide the first direct evidence of an inequality of mean In-Ga and Ga-In next-nearest neighbor separations in InGaN alloys. The degree of inequality increases with decreasing InN fraction x in the range accessible to extended x-ray absorption fine structure analysis of alloys (0.9 < x < 0.1). Its concurrence with an increase of luminescence efficiency in this composition range suggests that the breakdown of In/Ga randomness in InGaN is correlated with efficient radiative recombination in blue-green light emitting devices. (c) 2006 American Institute of Physics.

keywords

COMPOSITION DEPENDENCE; EXCITON LOCALIZATION; BANDGAP; MBE

subject category

Physics

authors

Kachkanov, V; O'Donnell, KP; Martin, RW; Mosselmans, JFW; Pereira, S

our authors

Share this project:

Related Publications

We use cookies for marketing activities and to offer you a better experience. By clicking “Accept Cookies” you agree with our cookie policy. Read about how we use cookies by clicking "Privacy and Cookie Policy".