Sol-gel derived morphotropic phase boundary 0.37BiScO(3)-0.63PbTiO(3) thin films

abstract

Dielectric/ferroelectric properties of morphotropic phase boundary 0.37BiScO(3)-0.63PbTiO(3) thin films with a PbTiO(3) seed layer deposited on platinized silicon substrates by sol-gel are examined. Room temperature dielectric constant of >1600 and dielectric loss of 0.02 are achieved (100 Hz). A well-defined hysteresis loop was observed with a P(r) of similar to 23 mu C/cm(2). In particular, the remarkable low E(c) of similar to 33 kV/cm of these films adds value to the potential application of BiScO(3)-PbTiO(3) films in high temperature ferroelectric memories. The influence of PbTiO(3) seed layer on the electric properties and the relation with the phase formation process, crystallinity, and microstructure of the films is discussed. (c) 2008 American Institute of Physics.

keywords

ELECTRICAL-PROPERTIES; PEROVSKITE SYSTEM; EPITAXIAL-FILMS; CERAMICS

subject category

Physics

authors

Xiao, JZ; Wu, AY; Vilarinho, PM

our authors

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