resumo
Silicon carbide (SiC) is a wide band gap material that is slowly but steadily asserting itself as a reliable alternative to silicon (Si) for high temperature electronics applications, in particular for the electrical vehicles industry. The passivation of SiC devices with diamond films is expected to decrease leakage currents and avoid premature breakdown of the devices, leading to more efficient devices. However, for an efficient passivation the interface between both materials needs to be virtually void free and high quality diamond films are required from the first stages of growth. In order to evaluate the impact of the deposition and seeding parameters in the properties of the deposits, diamond films were deposited on SiC substrates by hot filament chemical vapor deposition (HFCVD). Before the seeding step the substrates were exposed to diamond growth conditions (pretreatment PT) and seeding was performed with a solution of detonation nanodiamond (DND) particles and with 6-12 and 40-60 mu m grit. Diamond films were then grown at different temperatures and with different methane concentrations and the deposits were observed in a scanning electron microscope (SEM); their quality was assessed with Raman spectroscopy.
palavras-chave
NANOCRYSTALLINE DIAMOND; ULTRA-THIN; GROWTH; NANODIAMOND; NUCLEATION; CVD; SUSPENSIONS; MORPHOLOGY; PLASMA
categoria
Materials Science; Physics
autores
Mukherjee, D; Oliveira, F; Trippe, SC; Rotter, S; Neto, M; Silva, R; Mallik, AK; Haenen, K; Zetterling, CM; Mendes, JC
nossos autores
Rui Ramos Ferreira e Silva
Professor associadoagradecimentos
This work obtained financial support from FCT/MEC through national funds and when applicable co-funded by FEDER - PT2020 partnership agreement under the project UID/EEA/50008/2019 and within the scope of the project CICECO-Aveiro Institute of Materials, POCI-01-0145-FEDER-007679 (FCT Ref. UID/CTM/50011/2013). JCM was hired by Instituto de Telecomunicacoes under the decree law Nr. 57/2016. AKM acknowledges the Research Foundation Flanders (FWO) for his Postdoctoral Fellowship. The authors thank Mr. Igor Yamamoto Abe, Microelectronics Laboratory, Electrical Engineering Department, Polytechnic School of the University of S. Paulo, Brazil, for obtaining the Raman spectra.