Exploiting bandgap engineering to finely control dual-mode Lu-2(Ge,Si)O-5:Pr(3+)luminescence thermometers

resumo

It was proved quite recently that luminescence thermometry may benefit from utilizing the 5d -> 4f/4f -> 4f intensity ratio of Pr(3+)transitions. This paper presents a comprehensive study of Lu-2(Ge-x,Si1-x)O-5:Pr phosphors in the full range of Ge concentrations (x= 0-1) for luminescence thermometry. Silicon substitution by germanium allows effective management of their thermometric properties through bandgap engineering. The Ge/Si ratio controls the range of temperatures within which the 5d -> 4f Pr(3+)luminescence can be detected. This, in turn, defines the range of temperatures within which the 5d -> 4f/4f -> 4f emission intensity ratio can be utilized for thermometry. Altogether, the bandgap engineering allows widening the operating range of thermometers (17-700 K), fine-tunes the range of temperatures with the highest relative sensitivity, and reduces the inaccuracy of the measurements. The kinetics of the 5d -> 4f luminescence is also controlled by bandgap engineering and can be also used for luminescence thermometry. The Lu-2(Ge-x,Si1-x)O-5:Pr phosphors were, thus, designed as dual-mode luminescence thermometers exploiting either the inter- and intra-configurational intensity ratios or the 5d -> 4f decay time. The highest relative thermal sensitivity, 3.54% K-1, was found at 17 K for Lu-2(Ge-0.75,Si-0.25)O-5:Pr and at 350 K for Lu2SiO5:Pr and it was combined with a very low (<0.03 K) temperature uncertainty. Herein, we proved that bandgap engineering is a promising and effective approach to developing high-performance luminescence thermometers.

palavras-chave

FLUORESCENCE INTENSITY RATIO; TEMPERATURE-DEPENDENCE; PR3+ LUMINESCENCE; CRYSTAL-STRUCTURE; PHOSPHORS; EMISSION; LIFETIME; ENERGY; LEVEL; CE3+

categoria

Materials Science; Physics

autores

Sojka, M; Brites, CDS; Carlos, LD; Zych, E

nossos autores

agradecimentos

This work was developed within the scope of the project financed by the National Science Centre (NCN), Poland, under grant UMO-2017/25/B/ST5/00824 and the project CICECO-Aveiro Institute of Materials, UIDB/50011/2020 & UIDP/50011/2020, financed by Portuguese funds through the Portuguese Foundation for Science and Technology (FCT)/MCTES. Financial support from FCT (PTDC/CTM-NAN/4647/2014, NANOHEATCONTROL - POCI-01-0145-FEDER-031469) is also acknowledged. E. Z. and L. D. C. are grateful to the Polish National Agency for Academic Exchange (NAWA) for support under the NAWA-Bekker PPN/BEK/2018/1/00333/DEC/1 and NAWA-Ulam PPN/ULM/2019/1/00077/U/00001 projects, respectively.

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