abstract
Pure and 2 mol% Aluminium (Al) doped ZnO nanostructures were prepared by a simple and low cost wet chemical precipitation technique. Structure and morphology of the prepared samples were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). UV-visible spectrometry and band gap calculations confirmed the presence of structural defects in the samples. A significant enhancement in dielectric constant resulted from the incorporation of Al in ZnO lattice while an opposite trend was observed for dielectric lost. In addition, the electrical conductivity of Al-doped ZnO samples increased in comparison with that of pure ZnO due to the increase of available charge carriers after replacement of Zn ions by Al ions. (C) 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
keywords
OXIDE THIN-FILMS; ZINC-OXIDE; ELECTRICAL-PROPERTIES; SPRAY-PYROLYSIS; SOLAR-CELLS; TRANSPORT; NANOPARTICLES
subject category
Materials Science
authors
Zamiri, R; Singh, B; Belsley, MS; Ferreira, JMF
our authors
José Maria da Fonte Ferreira
Retired Professor
Reza Zamiri
Post-doc Fellowshipacknowledgements
The author Reza Zamiri and Budhendra Singh would like to express their personal thanks to FCT (Fundacaopara a Ciencia e a Tecnologia) for the post-doctoral research grants with reference numbers (SFRH/BPD/76185/2011) and SFRH/BPD/76184/2011, respectively. The support from CICECO is also acknowledged.