Deposition parameters and annealing key role in setting structural and polar properties of Bi0.9La0.1Fe0.9Mn0.1O3 thin films


The present work explores the processing conditions of Bi0.9La0.1Fe0.9Mn0.1O3 (BLFM) thin films, grown by RF sputtering on platinum metalized silicon substrates, and its impact on the structural and ferroelectric properties. The optimized processing conditions were found to be a combination of deposition of an amorphous film at low substrate temperature (ae550 A degrees C), followed by a thermal treatment at 550 A degrees C during 30 min, in order to prevent bismuth volatilization. This procedure leads to the formation of high-quality monophasic crystalline films with well-defined piezoelectric response exhibiting micron size domains.



subject category

Engineering; Materials Science; Physics


Carvalho, TT; Figueiras, FG; Pereira, SMS; Fernandes, JRA; de la Cruz, JP; Tavares, PB; Almeida, A; Moreira, JA

our authors


This work was developed in the scope of the project FCT/CERN/FIS-NUC/0004/2015, Norte-070124-FEDER-000070, I3N (PEst-C/CTM/LA0025/2013-14), CICECO-Aveiro Institute of Materials (UID/CTM/50011/2013), and PTDC/FIS-NAN/0533/2012, Grant SFRH/BD/41331/2007; SFRH/BPD/80663/2011 financed by national funds through the FCT/MEC, and when applicable co-financed by FEDER under the PT2020 Partnership Agreement.

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