Formation of As enriched layer by steam oxidation of As+-implanted Si

abstract

Segregation of implanted As during steam oxidation of Si wafers is shown to result in a highly enriched, thin layer of As at the interface between the oxide and the underlying Si. Also, the oxidation rate was found to increase by as much as a factor of similar to 2 depending on the depth distribution and fluence of the implanted As impurity. The thin As layer collected at the interface can be used in the design of very shallow junctions. This mechanism enables the formation of a narrow, degenerately doped layer of Si, which can be tailored to have a thickness of only few monolayers depending on the fluence of the implantation used. (C) 2009 Elsevier B. V. All rights reserved.

keywords

THERMAL-OXIDATION; SILICON; REDISTRIBUTION; INTERFACE; ROUGHNESS; KINETICS

subject category

Chemistry; Materials Science; Physics

authors

Baghizadeh, A; Agha-Aligol, D; Fathy, D; Lamehi-Rachti, M; Moradi, M

our authors

Groups

Share this project:

Related Publications

We use cookies for marketing activities and to offer you a better experience. By clicking “Accept Cookies” you agree with our cookie policy. Read about how we use cookies by clicking "Privacy and Cookie Policy".