abstract
Functional oxides on Cu have multiple applications. For thick films the required high sintering temperatures present a challenge for processing on base metal substrates. In this study it is shown that it is possible to adapt well-known ceramic processing strategies to the fabrication of thick lead zirconate titanate (PZT) films on Cu with useful ferroelectric properties. PZT powders with optimized particle sizes are used to fabricate thick films by electrophoretic deposition in combination with a post-deposition isostatic pressing step. This approach to maximize green packing is sufficient to dramatically lower the required sintering temperatures. 25 mu m thick PZT films on Cu sintered at 900 degrees C have a dielectric permittivity of 585, a loss tangent at 10 kHz of 0.03, a remanent polarization of 19 mu C cm(-2) and a coercive field of 22 kV cm(-1). This significant improvement in the dielectric response opens the possibility of using thick PZT films on Cu for a wide range of devices where cost, yield and reliability are concerns. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
keywords
ELECTROPHORETIC DEPOSITION
subject category
Materials Science; Metallurgy & Metallurgical Engineering
authors
Wu, AY; Vilarinho, PM; Kingon, AI
our authors
Aiying Wu
Researcher
Paula Maria Lousada Silveirinha Vilarinho
Vice Directoracknowledgements
The authors acknowledge the financial support from FEDER, FCT, POCI 2010, CICECO, and FAME Network, under contract FP6-500159-1. Daniel J. Lichtenwalner, North Carolina State University is acknowledged for his assistance with some ferroelectric measurements.