Modeling the emission red-shift in amorphous semiconductors and in organic-inorganic hybrids using extended multiple trapping

resumo

A model of thermal relaxation within localized states based on the extended multiple trapping framework is used to describe the red-shift of the emission maximum intensity as the excitation energy decreases. The model is applied to amorphous hydrogenated silicon (a-Si:H) and to organic-inorganic hybrids systems giving values for the energy gap, E-0, (1.896-3.882 eV) and for the beta (4.36-12.08 eV(-1)) parameter that characterizes the experimental decay of the density of localized states within the gap consistent with those achieved by some other recombination models previously reported for a-Si:H.. The thermal relaxation within localized states model is more physically detailed incorporating radiative and non-radiative transition mechanism for carriers relaxing into localized states that are explicitly absent in the previously reported theoretical descriptions.

palavras-chave

A-SI-H; WHITE-LIGHT EMISSION; RADIATIVE RECOMBINATION; QUANTUM CONFINEMENT; OPTICAL-PROPERTIES; POROUS SILICON; PHOTOLUMINESCENCE; LUMINESCENCE; THERMALIZATION; XEROGELS

categoria

Physics

autores

Ferreira, RAS; Ferreira, AL; Carlos, LD

nossos autores

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