Metallic Mg oxygen diffusion barrier diffusion applied for electronic devices

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Patent Details

Publication Number
WO2011070398
PT104865
Priority Date
2009-12-09
Publication Date
2011-06-16
International Patent Classification
H01L21/28
H01L21/302
H01L29/51
H01L21/22

Figures

figura
Image from SEM highlighting an 2nm Mg interlayer between an (100) silicon substrate and an 5nm hafnium oxide layer.

Abstract

The present invention provides a method for the production of microelectronic devices that uses a thin metallic Mg layer as oxygen diffusion barrier. This method prevents the oxygen diffusion into the substrate during the growth process of oxide thin films and/or prevents the oxygen escape from the substrate into the processing environment allowing thus a complete control of the oxygen stoichiometry and/or oxidation during the production process of the microelectronic device. If necessary and/or convenient the Mg thin layer can be diffused into the adjacent layers by thermal treatment.

Innovative aspects & main advantages

The use of interlayers in the manufacture of electronic devices is made towards preventing the passage of oxygen to the metallic electrode and thus its oxidation. With the increasing miniaturization of electronic components, the use of interlayers is subject to its diminution, following the scale miniaturization of these components. Hafnium, amide precursors, ALD non-aqueous, other deposition techniques such as MBE, replacement of SiO2 dielectric ultra-thin nitrided SiO2 interlayers and nitride deposed, among others, are some of the solutions that have been tested over the past years, all showing deficiencies at various levels. This technology presents a new approach with the following advantages:   
Conformal coating of an HfO2 thin film on top of the silicon substrate without intermixing between the interlayer and the oxide thin film on top without gradient due to change in density;
Improvement of the electrical properties after post-deposition annealing;
Presence of charges only due to the deposition technique we used for the deposition of the high gate dielectric (ALD).

Applications

Electronic components for various types of hardware.

Inventors

Lourenço, Armando ; Rauwel, Erwan

Our Inventors

foto Armando António Cardoso Dos Santos Lourenço

Armando António Cardoso Dos Santos Lourenço

Assistant Professor

Applicant

Universidade de Aveiro

Groups Involved

G2 - Photonic, Electronic and Magnetic Materials

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